VGF-Ge Wafer (100) 100mm dia x 0.5 mm, 2SP, N type ( As- doped), R: 0.173-0.25 ohm.cm

VGF-Ge Wafer (100) 100mm dia x 0.5 mm, 2SP, N type ( As- doped), R: 0.173-0.25 ohm.cmGe Wafer Specification Growing Method: VGF Orientation: (100) + 0. 5 Deg. Wafer Size: 100mm dia x 500 microns Surface Polishing: Two sides epi polished Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: As Doped Conductor type: N type Resistivity: 0. 173 0. 25 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Carrier concentration: 0. 09x10^17 1. 63x10^17 c. c

Safety Data Sheet      Operation Package must be opened and stored inside a glove box with Argon Gas and moisture less than 8 ppm and O2 less than 2 PPM

The wafer container is packed in 100 class Cleanroom (equivalent to ISO 5) and plastic bag

Thermal Expansion:                           a a= 16

1 mol/L LiTFSI

( You may use CIP to press again to increase density by about 5 - 10%

6mm thickness nickel foam here to get the desired thickness range from 0

SPECIFICATIONS: Winding Speed 0-250 RPM Adjustable

Resistivity:                        1015 W

Please click the picture below to find more equipment for preparing solid-state electrolyte

Apply a 2-3 mil wet film by brush

Other LSAT LaAlO3  MgO Wafer Box  NdCaAlO4 NdGaO3  SrTiO3 Film Coater SrLaAlO4  SrLaGaO4 YSZ Plasma Cleaner

Surface finish (RMS or Ra) :  One side  polished < 100A