SKU:53673675256
InSb (100) 10x10x 0.3 mm, N type, Te doped, 1 side polished
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Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
InSb (100) 10x10x 0.3 mm, N type, Te doped, 1 side polished10x10x0. 45 mm InSb wafer (N type, Te doped) Size: 10x10x0. 3 mm Orientation <100> + 0. 5o with two reference flats Polishing: one side side polishd ( back side etched ) Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Growth method LEC Orientation (100) + 0. 5o Doping Te doped Conductivity type N type Carrier Concentration (0. 19 0. 5)E18 @77K Mobility >(3. 58 5. 6)E4 cm2 Vs EPD <1200 1500 cm 2
it is suggested to use milling balls with a diameter of less than 10mm
please choose alumina/Nylon jars and zirconia media
Calcine mixed the powder in a high temp furnace under a suitable temperature
The infusion rate can be changed while pumping
2" InAs wafer: (Undoped
AlN Ceramic Substrates
Sieve Set No
09mm in Nickel Tab 0
and Skydrol® fluids
mso-para-margin-bottom:
27 Tap Density (g/cm³)
The LCD micrometer is waterproof with a resolution of 0
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