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SKU:58086407308
Ge Wafer Undoped (110) 3" dia x 0.5 mm 2 side polished resistivity: >50 ohm-cm
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Ships within 48 hours · Estimated delivery Jul 11 - Jul 16
Description
Ge Wafer Undoped (110) 3" dia x 0.5 mm 2 side polished resistivity: >50 ohm-cmGe Wafer Specification Growing Method: CZ Orientation: (110) + 0. 7 Deg. Wafer Size: 3" dia x 0. 5 mm Surface Polishing: two sides optical polished Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other
Conductor type: Semi-Insulating
Video and Operation Instructions
Materials Case and cap made of Nicke plated A3 steel
Size: 2" diameter x 0
Left flange: one 3/8" barbed needle valve
20 mm (for the separator to fully separate the electrodes in both negative and positive cases)
Wafer Size: 10 x 10 x0
W: 5 mm
Replacement Purchase spare springs for a replacement here
The 10" SiC or diamond cutting blade is used for cutting all kinds of materials with a maximum sample size of 30 mm x 30 mm
Features: Sapphire ( single crystal of Al2O3 ) is being used extensively as a substrate for III-V nitrides and for many other epitaxial films
8% (C101) [Note: The 25 um copper foils is single-side shiny]
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