SKU:83690482290
LaAlO3, (100) Ori. 0.5" x1.0mm wafer 1 SP
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- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 11 - Jul 16
Description
LaAlO3, (100) Ori. 0.5" x1.0mm wafer 1 SPLaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for the epitaxial growth of high Tc superconductors and magnetic and ferroelectric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications. Substrate Specifications: Wafer Size: 0. 5" dia + 0. 5 mm x 1. 0 thickness + 0. 05 mm Wafer Orientation: (100)
Thickness 58 um
Core Size: 76 mm (3 inches)
Electrode compositon: 93
Working Voltage 110VAC 50/60 Hz
Conductivity @800: >0
and low speed will result in the thinner film
Two pushing rods are highly polished and perfectly fitted into the die
24VDC motor
Compaction density: 3
Orientation: C-axis[0001] +-0
P: pressure (MPa) applied on your working piece
Specifications Cap Cap with Built-in PTC Thermistor for overcurrent protection
Quick Dispatch:
Your LaAlO3, (100) Ori. 0.5" x1.0mm wafer 1 SP orders ship within 1-2 business days.
Delivery Options:
- Standard: 3-7 business days
- Fast: 2-3 business days
- Express: 1-2 business days
Order Tracking:
You'll receive a tracking link by email once your LaAlO3, (100) Ori. 0.5" x1.0mm wafer 1 SP ships.
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