Ge Wafer (111) Undoped, 1" dia x 0.5 mm ,2SP, R:>50 ohm.cm

Ge Wafer (111) Undoped, 1" dia x 0.5 mm ,2SP, R:>50 ohm.cmGe Wafer Specification Growing Method: CZ Orientation: (111) + 0. 5 Deg. Wafer Size: 1" dia x 0. 5 mm Surface Polishing: two sides polished Surface roughness: Ra < 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754

Built-in PTFE slurry slot with 180mm coating width to make coating material evenly distributed ahead of the blade

CdSe single crystal CdSe single crystal

It can rapidly heat the sample up to 500ºC

(please set the oven to 30C

Compliance CE certified Instruction Manual & Demo Application Note This device also can be used for mixing high viscosity slurry

15Mpa is included

Cap Terminal Length: 12

If you need small width 85mm for Screen Printing Coater

Anode:    Anode Active+Acetylene Black (Conductive)+PVDF+NMP (or SBR+CMC)

because all pressing dies are made by high-stretched carbon steel for achieving high hardness to meet the essential requirements of making ceramic or metal samples

You may use silver glue stick spring with spacer to prevent moving

please click the image below to order