SKU:51572350328
InSb (100) 10x10x 0.45 mm, P type, Ge doped, two side polished
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- USA
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- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 11 - Jul 16
Description
InSb (100) 10x10x 0.45 mm, P type, Ge doped, two side polished10x10x0. 45 mm InSb wafer (P type, Ge doped) Size: 10x10x0. 45 mm Orientation <100> + 0. 5o with two reference flats Polishing: two sides polishd Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat N A Doping Ge Conductivity type P Type Carrier Concentration 1. 35x10^15 cc @77K Mobility 6300 cm2 Vs EPD <=200 cm 2 Resistivity: 7. 34E 1
Polish: both sides EPI polished
OVERALL TRAY SIZE Size = 50
Inert gas if use inside glovebox automatic pressure controlled glovebox )
Crystal: CaF2 Crystal
Surface fitness: fine ground
Please click picture below to find more equipment for preparing solid-state electrolyte
110 ~ 220V AC
Pack: Packed in 1000 class plastic bag
mso-padding-alt:0cm 5
Use Temperature: 675 deg C (1
Dimensions: 14"(L) x 14"(W) x 14"(H)
True density: 19
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