SKU:59249659756
VGF-GaAs (100) orientation, Si-doped 5 x 5 x 0.5mm, 1sp
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Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
VGF-GaAs (100) orientation, Si-doped 5 x 5 x 0.5mm, 1spGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 5x5x0. 5mm Polishing: one side polished Doping: Si doped Conductor type: S C N Carrier Concentration: (7. 2 11. 7) x 10^17 cm^3 Mobility: 2170 2650 cm^2 V. S EPD: <5000 cm^2 resistivity: (2. 56 3. 55)x10^ 3 ohm. cm Ra(Average Roughness) : < 0. 4 nm Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
Note: The outer diameter of the center of the tube is slightly longer
Drying Shrinkage
2 to order)
Material: LiNiCoMnO2 5:2:3)
Travel Distance 60mm Pressure Please note no pressure display on the pressing machine
247 deg F )
Non REO Impurity <0
BK7- glass substrates
The tape with graphene should be pressed firmly to the substrate
Sintering Temperature: 250oC · 360ºC Max
Portable 4 Probe Resistivity Tester
Polished: two side polished
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