SKU:97843888134
InAs (100), undoped 30mm dia wafer 1sp - IAUa30D05C1US
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
InAs (100), undoped 30mm dia wafer 1sp - IAUa30D05C1USGrowth method LEC Orientation (100) 0. 5 Deg Doping Undoped Conductivity type N type Carrier Concentration <3E16 cm3 Mobility >20000 cm2 V. S EPD <5E4 cm 2 Standard thickness 500 20 mm Standard diameter 30 mm Polish one side
a new material sample is formed
This AlF3 layer is thin enough (several angstroms) to allow electron tunneling
80×62mm Compliance Certified Warranty One Year limited manufacture warranty with lifetime support Operation Instructions
2)x10^-2 ohm
differential
Nominal FTO Film thickness: <150 nm
Resistivity: >50 Ohms-cm (If you would like to measure the resistivity accurately
Surface Polishing: Two sides epi polished
9E4 / cm 2
99% (Oxygen < 80 ppm)
EPD: < 200
EPD 1
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