SKU:4067764217
GaSb Wafer (111)-B, undoped,P-type 2"x0.5 mm ,2sp
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- USA
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- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 11 - Jul 16
Description
GaSb Wafer (111)-B, undoped,P-type 2"x0.5 mm ,2spWafer Specifications:. Size: 2" diameter x 0. 5 mm, Orientation: (111) B Flats: SEMI PF <01 1>. SF<0 11> Dopping: undoped, Conducting type: P type. Polish: Two side EPI ready polished Resistivity: N A Mobility: 600 700cm^2 Vs Carrier concentration: (1 3)x10^17 ohm. cm EPD : <2000 cm^ 2 Packing: 1000 class clean room in a single wafer container Surface finish (RMS or Ra) : < 5A Dopant Type Carrier Concentration ( cm 3) Mobility ( cm2 V. Sec)
Optional digital meter with alarm
Mixing guide:
Outstanding electronic properties
Cu Metallic Substrate ( polycrystalline)
Resistivity: >50 Ohms/cm (If you would like to measure the resistivity accurately
Surface Polishing: two sides polished
Packing: in 1000 class cleanroom with a vacuumed bag
EQ-HC-BL-300 for BL-SS-300
One pair of CR2032 button cells case
Inert gas can be filled inside the chamber and keep the gas flow
Power Input Socket External Power Cord Internal Power Extension
Specification Normal 0 7
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